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  4. Industrial realization of dry plasma etching for PSG removal and rear side emitter etching
 
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2007
Conference Paper
Title

Industrial realization of dry plasma etching for PSG removal and rear side emitter etching

Abstract
Inline production sequences are gaining more and more importance considering improved material flow and decreasing wafer material thickness. With the application of dry phosphorus silicate glass (PSG) etching combined with a subsequent SiNx deposition a further simplification of the process flow can be reached. Within this work, a new prototype etching and deposition system from Roth&Rau (called MAiA) is presented implementing a dry PSG removal, a single side emitter etch for the rear side as well as a SiNx deposition without leaving the vacuum line. Each process step itself has been tested and optimized and complete multicrystalline silicon solar cells have been produced implementing the new process sequence.
Author(s)
Rentsch, Jochen  
Decker, D.
Hofmann, Marc  
Schlemm, H.
Roth, K.
Preu, Ralf  
Mainwork
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM  
Conference
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2007  
File(s)
Download (140.82 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-356311
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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