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  4. Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide
 
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2000
Conference Paper
Title

Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide

Author(s)
Treu, M.
Schorner, R.
Friedrichs, P.
Rupp, R.
Wiedenhofer, A.
Stephani, D.
Ryssel, H.
Mainwork
Silicon carbide and related materials 1999. Vol.2  
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM) 1999  
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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