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Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide
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2000
Conference Paper
Title
Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide
Author(s)
Treu, M.
Schorner, R.
Friedrichs, P.
Rupp, R.
Wiedenhofer, A.
Stephani, D.
Ryssel, H.
Mainwork
Silicon carbide and related materials 1999. Vol.2
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM) 1999
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB