Optimization of Platinum dioxide properties by plasma oxidation of sputtered PtOx

We have previously used reactively sputtered Platinum oxide thin film as DNA sensing element. In this work, we subject the reactively sputtered Platinum oxide thin films to an additional RIE step for 3, 6 and 9 min and carry out a detailed comparative study of the material and electrical properties of these films. XRD and XPS analysis revealed that when the reactively sputtered Platinum oxide film was subjected to RIE step for longer periods of time, it became progressively a-PtO2 in nature. Activation energies of 0.24 eV, 0.26 eV, 0.29 eV and 0.31 eV were obtained for the as deposited film and the films subjected to RIE step for 3, 6 and 9 min respectively. The Hall mobility of the as deposited Platinum oxide film was found to be 32.15 cm2V−1s−1 at room temperature. However, when the as deposited film was subjected to RIE step for 9 min the mobility value rises to as high as 136.13 cm2V−1s−1 at room temperature.