• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Energy harvesting in the back-end of line with CMOS compatible ferroelectric hafnium oxide
 
  • Details
  • Full
Options
2020
Conference Paper
Title

Energy harvesting in the back-end of line with CMOS compatible ferroelectric hafnium oxide

Abstract
We demonstrate the feasibility of thermal energy recovery in the back end of line (BEoL) employing CMOS-compatible ferroelectric hafnium oxide. Efficient pyroelectric energy harvesting with a sizable power density of 92 mWcm-3 under typical thermal conditions is achieved. Our energy harvesting approach exceeds the efficiency limit of commonly-used thermoelectric materials, without using a heat switch. The low-voltage operation, scalability, and abundance in CMOS manufacturing make HfO2-based ferroelectrics promising candidates for integrated energy harvesting and solid-state refrigeration applications.
Author(s)
Mart, C.
Abdulazhanov, S.
Czernohorsky, M.
Kämpfe, T.
Lehninger, D.
Falidas, K.
Eßlinger, S.
Kühnel, K.
Oehler, S.
Rudolph, M.
Wiatr, M.
Kolodinski, S.
Seidel, R.
Weinreich, W.
Eng, L.M.
Mainwork
66th IEEE International Electron Devices Meeting, IEDM 2020  
Conference
International Electron Devices Meeting (IEDM) 2020  
DOI
10.1109/IEDM13553.2020.9371967
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024