Degradation of the minority carrier lifetime caused by Mn-correlated defects in Ga-implanted Si:P

P-doped FZ-silicon is intentionally contaminated with gallium (Ga) and manganese (Mn) by ion implantation. The implanted samples are annealed at elevated temperature and the electrical parameters of the formed defects are extracted by deep level transient spectroscopy (DLTS). In addition, the effect of the generated defects on the minority carrier lifetime is determined by the photo-conductance-decay (PCD) technique. Lifetime measurements indicate that Mn-related defects are strong recombination centers.