RF models for Through SiC Vias for Highly Integrated Interposer Technology

This paper we will analyzes the parameter space given by present manufacturing technology of TSiCVs and compares it to standard TSV values. Beside the different geometries available in TSiCV technology, the resistivity of the material is known to be a key parameter as studies on low, medium and high resistivity silicon have indicated previously. A full wave simulation model is presented and the applicability of analytical models known from TSVs adapted for TSiCVs is discussed. The RF modeling of TSiCVs is the next crucial step to optimize manufacturing of TSiCVs for RF needs and to fully integrate a broad spectrum of functionalities on one SiC platform.