Electrical and optical properties of indium tin oxide thin films deposited with plasma ion-assistance

Indium tin oxide (ITO) thin films have been deposited at room temperature using plasma ion-assistance. The specific electrical resistivity was around 500 my ohm cm and the internal transmittance was higher than 90 per cent in the visible region for ITO films with 300 nm physical thickness. Similar results could be obtained by evaporating a mixture of indium oxide and tin oxide as well as simultaneous evaporation of both oxides.