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2005
Conference Paper
Title
A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Other Title
Ein Mikrostreifen X-Band AlGaN/GaN Leistungsverstärker MMIC auf s.i. SiC Substrat
Abstract
A two-stage high-power amplifier MMIC was realized with a chip size of 4.5 mm x 3 mm operating between 8 GHz and 10 GHz based on a fully integrated microstrip AlGaN/GaN HEMT technology on s.i. SiC substrate. The MMIC device delivers a maximum pulsed output power of 8.9 W (39.5 dBm) at 8.5 GHz at V(ind DS) = 31 V, 10 % duty cycle, and more than 6 dB gain compression level, and features a linear gain in excess of 20 dB.
Author(s)
