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  4. Single-chip 220-GHz active heterodyne receiver and transmitter MMICs with on-chip integrated antenna
 
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2011
Journal Article
Title

Single-chip 220-GHz active heterodyne receiver and transmitter MMICs with on-chip integrated antenna

Abstract
This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1-m GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules. The double-sideband noise figure (NF) and conversion gain of the receiver module are measured with the -factor method. The total noise temperature of 1310 ± 100K(corresponding to an NFof 7.4 dB), including the losses in the lens and antenna, is measured at 2 20 GHz with a respective conversion gain of 3.5 dB. The radiated continuous-wave power from the transmitter module is measured to be up to -6 dBm from 212 to 226 GHz. The transmitter and receiver are linked in a quasi-optical setup and the IF to IF response is measured to be flat up to 10 GHz. This is verified to be usable for transmission of a 12.5-Gb/s data stream between the transmit and receive modules over a 0.5-m wireless link. The modules operate with a 1.3-V supply and each consume 110-mW dc power. The presented 220-GHz integrated circuits and modules can be used in a variety of applications, including passive and active imaging, as well as high-speed data communications. To the best of our knowledge, these MMICs are the highest frequency single-chip low-noise heterodyne receiver and transmitter pair reported to date.
Author(s)
Abbasi, M.
Gunnarsson, S.E.
Wadefalk, N.
Kozhuharov, R.
Svedin, J.
Cherednichenko, S.
Angelov, I.
Kallfass, I.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Zirath, H.
Journal
IEEE transactions on microwave theory and techniques  
DOI
10.1109/TMTT.2010.2095028
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • G-Band

  • imaging

  • metamorphic high electron mobility transistor

  • multifunctional

  • microstrip

  • millimeter wave

  • monolithic microwave integrated circuit (MMIC)

  • single-chip

  • slot-square substrate lens feed antenna

  • 220 GHz

  • quasi-optical

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