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  4. Modeling of high-voltage NMOS transistors using extended BSIM3 model
 
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2008
Conference Paper
Title

Modeling of high-voltage NMOS transistors using extended BSIM3 model

Abstract
This paper presents a procedure for modeling and electrical parameter extraction of high-voltage NMOS transistors from the 1.2um CMOS/pressure sensor process. The well known and very robust Berkeley BSIM3 model was applied as a basis for modeling. Unfortunately BSIM3 does not include such specific high-voltage effects as drain extension, quasi-saturation and self-heating. In order to account for these effects in the modeling procedure, sub-circuit extension was implemented. All parameters were extracted with the IC-CAP automated test system. The model was implemented in SPECTRE and validated by simulating single devices and a ring oscillator.
Author(s)
Pieczynski, J.
Doncov, I.
Mainwork
15th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2008. Proceedings  
Conference
International Conference Mixed Design of Integrated Circuits and Systems (MIXDES) 2008  
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • high voltage

  • NMOS transistor

  • model parameter extraction

  • drain extension

  • self-heating

  • BSIM3

  • ICCAP

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