Determination of recombination parameters in silicon solar cells using light induced transients

A separate determination of the influence of base lifetime, back surface recombination velocity and emitter saturation current on recombination in 1 ohm cm and 12 ohm cm p-type silicon solar cells is investigated. I(sc) and V(oc)-transients induced by a light source with long pulses and high penetration depth as well as one with short pulses and low penetration depth are compared. Calculated time dependent excess carrier distributions and the corresponding decay curves are displayed in comparison with measured transients. It is found that by a replacement of the BSF with an Ohmic contact additional information can be gained only for the 1 ohm cm, but not for the 12 ohm cm material. Results for the dependence of surface recombination velocities at oxide passivated surfaces on light intensity are presented. (ISE)