An explanation of transient enhanced diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing

The time evolution of dopant diffusion and electrical activation after boron ion implantation into crystalline silicon is modelled by solving a system of coupled diffusion-reaction equations. The reactions taken into account are the Frank-Turnbull mechanism Bi+V-Bs, the kick-out mechanism Bi-Bs+I and the generation or recombination of silicon self-interstitials and vacancies O-I+V. Substitutional diffusion of boron via an interstitial-assisted mechanism is assumed. Adopting such an approach, the postulation of a nonequilibrium initial distribution of interstitials allows to model both the gradual boron activation and the transient enhanced diffusion of the substitutional boron.