Homogeniety of hydrogenated microcrystalline silicon P-layers on glass substrate

Developed large area (45×45cm) PECVD (Plasma Enhanced Chemical Vapor Deposition) method was applied to prepare p type microcrystalline silicon thin films (c-Si:H) on borofloat glass substrates for use of silicon thin film solar cells. The resistivity, thickness and index distribution of large area c-Si:H thin films prepared at various deposition conditions including flow ratio of source gases, pressure and temperature were measured by four-probe mapping, ellipsometry mapping and VIS-NIR spectrometer method. The homogeneity contour was illustrated to be sensitive to process parameters especially the flow ratio of source gases. This can be one of important factors to affect large area c-Si:H thin film performance especially in production process. Pin structure on glass substrate and silicon ribbon substrate was prepared with optimized deposition conditions.