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  4. Low temperature and low pressure die-attach bonding of high power light emitting diodes with self reducing copper complex paste
 
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2021
Conference Paper
Title

Low temperature and low pressure die-attach bonding of high power light emitting diodes with self reducing copper complex paste

Abstract
The automotive high power light emitting diode (LED) market is expected to grow to ∼ US$ 30 billion by 2024 [1] and new interconnect technologies that enable reliable operation are required. Traditionally AuSn soldering or Ag sintering have been the interconnect technologies of choice. However, the constantly increasing price of Au and Ag have been a motivation to find low cost alternatives offering similar or better performances. Cu offers the next best electrical and thermal characteristics among all metals and is also cheaper by a factor 100 compared to Ag. Nevertheless, oxidation of Cu particles, long sintering times and comparatively high sintering temperature are major challenges that need to be addressed. In the present study, a low temperature, low pressure, rapid sintering process for high power LEDs is developed. A self-reducing Cu paste composed of commercially available Cu(II) formate tetrahydrate particles dispersed in a binder combination of a-terpineol and polyethylene glycol 600 (PEG600) is developed. Die-attach bonding is achieved by sintering Cu nanoparticles realized in-situ through the thermal decomposition of the Cu(II) formate molecules. Shear strength values of ∼70 MPa are achieved while sintering at 275 °C for 5 min in an open bond chamber under a constant flow of nitrogen with an application of 10 MPa bonding pressure. A dense and homogeneous interconnect with low porosity (< 30%) is achieved. Additionally, the developed Cu paste is observed to be compatible with standard metallization, such as Ag and Au, apart from sintering on bare Cu substrates, and to be suitable for standard stencil and screen printing applications. The analyzed solution offers a promising die-attach bonding technology that can be easily integrated into existing Ag sinter production lines without the need for high capital investments for extensive equipment redesign and recommissioning, thereby offering the manufacturers the flexibility of running both Ag and Cu sintering on the same production lines based on their specific product requirements.
Author(s)
Bhogaraju, Sri Krishna
Technische Hochschule Ingolstadt
Schmid, Maximilian
Technische Hochschule Ingolstadt
Hufnagel, Elias
Technische Hochschule Ingolstadt
Conti, Fosca
Universität Padua
Kotadia, Hiren
Warwick Manufacturing Group WMG
Elger, Gordon  
Fraunhofer-Institut für Verkehrs- und Infrastruktursysteme IVI  
Mainwork
IEEE 71st Electronic Components and Technology Conference, ECTC 2021. Proceedings  
Project(s)
Innovative Lote und Verbindungsprozesse für elektronische Baugruppen  
Entwicklung und Qualifizierung von Interconnects für Miniaturisierte LEDs  
Funder
Bundesministerium für Bildung und Forschung -BMBF-  
Bundesministerium für Bildung und Forschung -BMBF-
Conference
Electronic Components and Technology Conference (ECTC) 2021  
DOI
10.1109/ECTC32696.2021.00094
Language
English
Fraunhofer-Institut für Verkehrs- und Infrastruktursysteme IVI  
Keyword(s)
  • low temperature sintering

  • rapid sintering

  • Cu(II) formate

  • reducing binder

  • low pressure sintering

  • high bond strength

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