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  4. Dual bridge 6 Gsample/s track and hold circuit in AlGaAs/GaAs/AlGaAs HEMT technology
 
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1998
Journal Article
Title

Dual bridge 6 Gsample/s track and hold circuit in AlGaAs/GaAs/AlGaAs HEMT technology

Other Title
6 Gsample/s Folge-Halte-Schaltkreis mit Doppelbrücke in AlGaAs/GaAs/AlGaAs HEMT-Technologie
Abstract
A T&H circuit with a sampling rate of 6Gsample/s has been experimentally demonstrated in AlGaAs/GaAs/AlGaAs HEMT technology. The circuit utilises a dual bridge topology suitable for interleaved ADC circuits, doubling the effective sampling rate with an insignificant increase in area compared to the previously reported solutions.
Author(s)
Bushehri, E.
Thiede, A.
Staroselsky, V.
Timochenkov, V.
Lienhart, H.
Bratov, V.
Jakobus, T.
Journal
Electronics Letters  
DOI
10.1049/el:19980692
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Abtast-Halte-Schaltung

  • analog-digital conversion

  • Analog-Digital-Umsetzung

  • Folge-Halte-Schaltkreis

  • GaAs HEMT

  • high speed electronic

  • Hochgeschwindigkeitselektronik

  • sample and hold

  • track and hold

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