A novel delineation technique for 2D-profiling of dopants in crystalline silicon

An optimized delineation. technique was described.Using this technique, up to three equi-concentration lines can be made visible by one delineation process with high local resolution.The asymmetrical distribution of the concentration of implanted ions due to the 7 degree tilt during implantation and the mask edge effect due to the perpendicular side wall can be observed.By modifying the etching conditions equi-concentration lines covering more than four orders of magnitude of concentrations can be made visible.Parameters for two-dimensional simulation of implantation can be ex tracted.Combined with the FIB technique, this method is also suitable for the two-dimensional characterization of real devices, independent of the device structure.