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1997
Conference Paper
Title
MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure
Abstract
The realisation of TBQW structures requires material of optimised optical, electrical and structural properties. Therefore investigations on the MOVPE growth conditions were carried out which is be reported following a brief discussion of the TBQW structure and related design aspects. Experimental results of a Mach-Zehnder interferometer type TBQW optical switch is presented demonstrating the achievement of polarisation independent electro-optic switching behaviour.
Language
English
Keyword(s)
aluminium compounds
electro-optical switches
gallium arsenide
iii-v semiconductors
indium compounds
mach-zehnder interferometers
optical waveguides
semiconductor growth
semiconductor superlattices
tunnelling
vapour phase epitaxial growth
movpe growth
polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier mqw waveguide structure
tbqw structures
movpe growth conditions
mach-zehnder interferometer type tbqw optical switch
polarisation independent electro-optic switching behaviour
GaInAs-AlInAs