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  4. Growth and characterization of 2" and 4" low EPD InP substrate crystals by the Vertical Gradient Freeze (VGF)-method
 
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2005
Conference Paper
Title

Growth and characterization of 2" and 4" low EPD InP substrate crystals by the Vertical Gradient Freeze (VGF)-method

Abstract
The growth of twin-free 4 semi-insulating InP crystals is reported, the influence of the EPD of the seed crystal and the cone angle of the crucible on dislocation and twin formation were studied.
Author(s)
Schwesig, P.
Sahr, U.
Friedrich, J.  
Müller, G.
Köhler, A.
Kretzer, U.
Eichler, S.
Mühe, A.
Mainwork
International Conference on Indium Phosphide and Related Materials 2005  
Conference
International Conference on Indium Phosphide and Related Materials (IPRM) 2005  
DOI
10.1109/ICIPRM.2005.1517510
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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