Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography

In this paper, we present our technique for obtaining a real-time 3-D volume shape of the SiC crystal using X-ray computed tomography (CT). In particular, it is possible to determine in-situ the shape of the growth interface with high precision at growth temperatures above 2000 °C in a conventional 3 physical vapor transport (PVT) growth system. We show that the size and shape of a facet can be monitored at different stages during growth and furthermore the crystal's face boundary can be determined with high precision throughout the whole growth process. Real-time in our case means recording one image sequence within 2 to 15 minutes depending on the quantity and quality of the images.