Numerical simulation and modeling of GaAs quantum-well solar cells

This paper presents results of numerical simulations of GaAs solar cells with quantum wells (QWs) included in the intrinsic region between the emitter and base layer. These QWs extend the absorption edge beyond that of the GaAs bandgap. The modeling of the solar cell characteristics was carried out within a commercially available semiconductor simulation environment. In order to consider the absorption properties of the wells a numerical model using a finite rectangular QW was established. The model is successfully validated through a comparison of the simulated external quantum efficiency (EQE)with measurement results of two different QW solar cell structures. As a first application of our model the variation in the EQE with the QW thickness is studied.