1991
Journal Article
Title

Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE

Abstract
InGaAs/InGaAsP MQW SC lasers for 1.55 mu m emission wavelength with different numbers of quantum wells have been fabricated using low-pressure MOVPE. Photoluminescence and gain spectra and threshold current densities and the temperature behaviour T0 of broad area lasers at varying cavity lengths have been investigated.
Author(s)
Rosenzweig, M.
Ebert, W.
Franke, D.
Grote, N.
Sartorius, B.
Wolfram, P.
Journal
Conference
DOI
Language
English
Keyword(s)