Time-Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS Technology

The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively studied, its behavior in SiC MOSFETs within CMOS technology remains largely unexplored. In this work, we analyzed the effect of temperature and device size on TDDD failure time while employing failure analysis to identify two distinct failure structures. The finding of this research enhances the understanding of TDDB failure mechanisms and provides valuable insights for improving device reliability.