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  4. Sensitivity of a 20-GS/s InP DHBT latched comparator
 
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2010
Conference Paper
Title

Sensitivity of a 20-GS/s InP DHBT latched comparator

Abstract
We present simulations and measurements of the sensitivity of a master-slave emitter-coupled logic (ECL) latched comparator implemented in an InP/GaInAs DHBT technology. The circuit exhibited simulated and experimental sensitivities of 11.5 mV and 17 mV, respectively, at a clock rate of 20 GHz, with no preamplifier.
Author(s)
Kraus, S.
Makon, R.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kallfass, I.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Driad, Rachid  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Moyal, M.
Ritter, D.
Mainwork
22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010. CD-ROM  
Conference
International Conference on Indium Phosphide and Related Materials (IPRM) 2010  
DOI
10.1109/ICIPRM.2010.5515962
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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