Electrical and structural characteristics of thin buried oxides

In this paper a continuous thin BOX obtained by oxygen implantation into silicon at 200 keV is experimentally studied; the aim of this work is the correlation of BOX structural imperfections (inclusions and pinholes) as seen by transmission electron microscopy (TEM) with the electrical characteristics measured by apacitors with scaled areas. A method for obtaining information on the distribution of the BOX silicon inclusions from the breakdown voltage is proposed. The heterogeneity of these inclusions is found to affect the current-voltage characteristics.