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1993
Journal Article
Title
Low-temperature MBE of AlGaInAs lattice-matched to InP
Abstract
Low-temperature growth of AlGaInAs on InP is limited by the incorporation of excess arsenic. Reduction of growth temperature and increase of the Al content result in an enhancement of the material resistivity. The specific resistivity is correlated with incorporation of deep traps.
Keyword(s)
aluminium compounds
deep levels
electronic conduction in crystalline semiconductor thin films
gallium arsenide
iii-v semiconductors
indium compounds
molecular beam epitaxial growth
semiconductor growth
low temperature mbe
semiconductor
excess As
growth temperature
Al content
material resistivity
deep traps
AlGaInAs-InP