Shunt detection capabilities of luminescence imaging on silicon solar cells

We present theory, simulations and measurements showing the research status on shunt detection capabilities of luminescence imaging. The relation between local junction voltage and luminescence signal is discussed. Several aspects regarding series resistance losses caused by lateral majority current flows in solar cells, which are the reason why shunts can be detected with luminescence imaging, are investigated with the help of circuit simulations. Finally, we discuss a fundamental restriction of luminescence imaging for shunt detection but we will also show that this disadvantage could turn into a strength for certain applications.