Demonstration of a hybrid opto-electronic transmitter on soI for access networks

We present a hybrid integrated transmitter comprised of an InP/InGaAsP electro-absorption modulated laser (EML) electrically driven by a BiCMOS SiGe electronic circuit on 4-mu m SoI substrate. The EML includes an electro-absorption modulator integrated together with a distributed feedback laser and a spot-size expander. The modulator driver is fabricated using the SiGe BiCMOS approach with 2.5 Vp-p nominal output swing. Both elements have been flip-chip mounted on a thick SoI board using 14-mu m gold-tin bumps and employing a high accuracy flip-chip bonder. The photonic chip has a footprint of 7 mm(2) and consumes a power of 0.8 W. We test the device optically and electrically demonstrating error-free operation at 10 and 20 Gb/s.