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  4. Ultrafast dephasing in GaAs and GaAs/AlGaAs quantum wells
 
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1992
Conference Paper
Title

Ultrafast dephasing in GaAs and GaAs/AlGaAs quantum wells

Other Title
Ultraschneller Phasenverlust in GaAs und GaAs/AlGaAs-Quantentöpfen
Abstract
We study the dephasing of excitions and free carriers in GaAs bulk and quantum well samples. The nonlinear response is dominated by the excitionic transitions, which have a room temperature dephasing time Tsub2 of about 250fs. The dephasing time of free carriers is much shorter than our time resolution (100fs).
Author(s)
Leo, K.
Haring Bolivar, P.
Maidorn, G.
Kurz, H.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
21th International Conference on the Physics of Semiconductors 1991  
Conference
International Conference on the Physics of Semiconductors 1992  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Halbleiter

  • photoluminescence

  • Photolumineszenz

  • semiconductor

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