Tunability of optical and dielectric properties

In the realm of functional materials, the tunability of optical and dielectric properties stands as a cornerstone for advancing modern photonics and radio frequency (RF) devices. This chapter delves into the electro-optic (EO) effect, particularly the Pockels effect, within ferroelectric HfO2 thin films, as well as into the tunability of the dielectric constant. It underscores the pivotal role these materials play in Si photonics and RF circuits, offering complementary metal-oxide-semiconductor (CMOS) compatibility and high-frequency operation capabilities. Through experimental and theoretical lenses, the EO properties of these films are explored, revealing their potential for seamless integration into silicon-based devices. However, the development of hafnium oxide-based devices is not without its challenges, which are discussed within this chapter. Furthermore, an outlook is provided on how to overcome these obstacles and fully harness the transformative power of ferroelectric HfO2 films in optical and RF applications.