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  4. Influence of LO-phonon emission on bloch oscillations in semiconductor superlattices
 
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1997
Journal Article
Title

Influence of LO-phonon emission on bloch oscillations in semiconductor superlattices

Other Title
Einfluß von LO-Phononenemission auf Bloch-Oszillationen in Halbleiter-Übergittern
Abstract
The intraband phase coherence of electronic Bloch wavepackets in semiconductor superlattices is partially conserved when electrons undergo energy relaxation by LO-phonon emission. The decay time of the intraband coherence as probed by terahertz-emission spectroscopy is found to be unaffected by excitation below or above the threshold for LO-phonon emission. On the other hand, the population relaxation probed by femtosecond optical transmission spectroscope is drastically accelerated when the threshold is reached. Electrons which have undergone LO-phonon emission form a more localized distribution in k-space giving rise to a stronger THz signal.
Author(s)
Wolter, F.
Roskos, H.G.
Haring Bolivar, P.
Bartels, G.
Kurz, H.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Grahn, H.T.
Hey, R.
Journal
Physica status solidi. B  
DOI
10.1002/1521-3951(199711)204:1<83::AID-PSSB83>3.0.CO;2-B
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • III-V Halbleiter

  • III-V semiconductor

  • optical measurement

  • optische Messung

  • superlattice

  • Übergitter

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