Scalable Quantum Memory Nodes using nuclear spins in Silicon Carbide

The ultimate motivation of my project is to address the possibility of building a quantum analogue of Internet of Things in order to improve the standards of quantum information processing. A distributed quantum computing network which is capable of achieving this goal, would require large sets of memory nodes capable of performing arbitrary quantum information protocols with high fidelity [1,2]. So far, the challenge in this field has been in realizing such quantum memory nodes with features for scalable quantum computing. Solid state spins in 4H-Silicon Carbide (4H-SiC) owing to its material properties provides a suitable platform in achieving this goal wherein a controlled generation of highly coherent qubit registers using nuclear spins (¹³C or ²⁹Si) and silicon vacancy color centers (V<inf>si</inf>^- center) are possible[3,4]. The magnetic dipole-dipole coupling between the isotope nuclear spins and the silicon vacancy color center can be tapped using microwave pulse (MW) sequence (as shown in Fig. 1 (a)) for controlled driving of nuclear spin.