GaSb-based 2.0 µm SDL with 17 W output power at 20°C

A gallium antimonide-based semiconductor disk laser (SDL) emitting 17 W of continuous wave output power at a heat sink temperature of 20°C and an emission wavelength of 2.02 µm are presented. This high-output power is achieved by optimising the thermal management and reducing the quantum deficit of the SDL structure.