A SiGe Based 0.48 THz Signal Source with 45 GHz Tuning Range

This publication shows a silicon-germanium (SiGe) based signal source that reaches 0.4968 THz. It uses the SG13G3 BiCMOS technology from IHP. This technology represents a major leap forward, closing the THz gap. The heterojunction bipolar transistor (HBT) offers an f-{t} of 470 GHz and an f-{max} of 700 GHz. Step by step, each component is described, and intermediate results are shown. By using a voltage-controlled-oscillator (VCO) at 120 GHz, it is possible to create a tuning range of 45.4 GHz and 9.5 % in the THz range, respectively. A bootstrapped Gilbert cell frequency doubler, a power amplifier (PA) at 240 GHz, and a push-push frequency doubler as the last stage generate the THz signal with up to -16.4 dBm output power and a 3 dB flatness over the whole tuning range of 45.4 GHz. The DC-Power consumption of the THz source is 640 mW.