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1987
Journal Article
Title

Redeposition in ion milling

Abstract
Redeposition is, beside trenching, the most important secondary effect in ion milling, which has a serious influence on the obtained profiles. An analytical model is developed on the basis of mass preservation: The complete mass, emerging from one milled target point, is redeposited on a screen. Considering a cos(4)-distribution of the sputtered particles, an equation for the thickness of the redeposited layer is given. These results are implemented in the computer simulation program COMPOSITE. A comparison between simulated and etched profiles shows a good agreement. (IMT)
Author(s)
Müller, K.P.
Pelka, J.
Journal
Microelectronic engineering  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • computer simulation

  • Computersimulation

  • ion beam etching

  • ion milling

  • Ionenstrahlätzung

  • process modeling

  • Prozeßsimulation

  • redeposition

  • Sputter

  • sputtering

  • trenching

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