Millimeter-wave circuits based on advanced metamorphic HEMT technology

Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length an 4" GaAs substrates for millimeter-wave applications are discussed in this paper. Extrinsic cut-off frequencies of f(ind t) = 293 GHz and f(ind max) = 337 GHz were achieved. The IC process features high yield on transistor and circuit levels. Single-stage low-noise amplifiers demonstrate a small signal gain of 12 dB and a noise figure of 2.2 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 19 dB at 200 GHz. These results are equivalent to those achieved using state-of-the-art InP-based HEMT technologies.