Comparative study of the SbGa heteroantisite and off-center OAs in GaAs

The (O/plus) donor level of the SbsubGa heteroantisite and the off-center OsubAs-induced EL3 level in GaAs have very similar thermal emission rates for electrons and are therefore difficult to distinguish by deeplevel transient spectroscopy (DLTS). It is shown that a reliable DLTS assessment of the SbsubGa level is nevertheless possible if additional quantitative information about SbsubGa and EL3 is obtained from magnetic resonance and local vibrational mode spectroscopy, respectively.