The fabrication and investigation of MoSi2 layers

Layers of MoSi2 were fabricated by implanting arsenic ions through Mo films on Si and subsequent annealing. Ion-beam mixing caused by the implantation is indispensable for the formation of the silicide because it destroys the oxide film between silicon and metal layer, which otherwise would inhibit the reaction. After ion-beam mixing MoSi2 is formed, whose thickness is proportional to the implanted dose. The properties of the silicide layers were investigated by Rutherford Backscattering Spectroscopy, Transmission Electron Microscopy and sheet resistivity measurements. The patterning of silicide is very convenient by etching off the unreacted molybdenum in concentrated HNO3. The thickness of silicides obtained by ion-beam mixing were compared with the results of Monte Carlo simulation. (AIS-B)