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  4. Localization of the solid/liquid interface during directional solidification of silicon by a pulse-echo ultrasonic technique
 
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1991
Conference Paper
Title

Localization of the solid/liquid interface during directional solidification of silicon by a pulse-echo ultrasonic technique

Abstract
An ultrasonic system is suited to detect the solid/liquid interface in a directional solidification process of silicon. Such processes are used to produce large multicrystalline ingots from which silicon wafers for low cost solar cells for terrestrial power applications are sliced. Several ultrasonic techniques are discussed in this paper. A pulse-echo system has been built and attached to a commercial type solidification machine. The pulses of a piezoelectric transducer are coupled into the melt via a transmission rod made of an appropiate material that withstands the temperature and the reactivity of liquid silicon. Several ceramic rods have been considered, SiC and Al2O3 were found to be suited best. Clear echoes from the liquid/solid interface have been detected. These signals allowed to calculate the depth of the melt and the solidification velocity. For comparison the depth was measured with an Al2O3 sounding rod. Good agreement was found.
Author(s)
Haas, Fridolin
Schätzle, P.
Knobel, R.M.
Eyer, Achim
Paul, M.
Mainwork
Tenth E.C. Photovoltaic Solar Energy Conference '91. Proceedings  
Conference
Photovoltaic Solar Energy Conference 1991  
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • localization of solid/liquid interface

  • multicrystalline silicon

  • silicon ingot

  • solidification velocity

  • ultrasonic measurement

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