Characterization of CMOS-devices and circuits build on SIMOX-substrates

CMOS devices and circuits have been built in SIMOX subtrates, implanted using a NV 200 high current oxygen implanter. NMOS and PMOS transistors are free from leakage currents showing excellent subthreshold slopes (70 mV/dec for NMOS). The variation of threshold voltage across a 4 inch wafer is less than 30 mV and comparable to bulk silicon devices. The SOI-circuits can be operated at temperatures up to 300 xC.