English
Deutsch
Log In
Log in with Fraunhofer Smartcard
Password Login
Research Outputs
Fundings & Projects
Researchers
Institutes
Statistics
Fraunhofer-Gesellschaft
Home
Fraunhofer-Gesellschaft
Artikel
Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors
Details
Full
Export
Statistics
Options
Show all metadata (technical view)
2007
Journal Article
Title
Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors
Author(s)
Lemberger, M.
Baunemann, A.
Bauer, A.J.
Journal
Microelectronics reliability
DOI
10.1016/j.microrel.2007.01.032
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
