• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Optical anisotropy in semipolar (Al,In)GaN laser waveguides
 
  • Details
  • Full
Options
2010
Journal Article
Title

Optical anisotropy in semipolar (Al,In)GaN laser waveguides

Abstract
In this work, the optical eigenmodes of a semipolar (Al,In)GaN laser diode are calculated. A full vectorial one-dimensional 4×4 transfer matrix method is used to correctly incorporate the influence of birefringence of the wurtzite crystal. Depending on the orientation of the laser waveguide relative to the c-axis, the eigenmodes show TE/TM- or extraordinary/ordinary polarization. The polarization direction of the eigenmodes is crucial for the performance of the laser, as it determines the relevant interband matrix elements for the optical gain.
Author(s)
Scheibenzuber, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schwarz, U.T.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Veprek, R.
Witzigmann, B.
Hangleiter, A.
Journal
Physica status solidi. C  
Conference
International Conference on Nitride Semiconductors (ICNS) 2009  
DOI
10.1002/pssc.200983646
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • optical property

  • waveguide

  • laser

  • (Al,In)GaN

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024