Carrier concentration profiles by high-energy boron ion implantation into silicon

P-type carrier concentration profiles, formed by high- energy boron ion implantation at 400 and 700 keV into p-type silicon followed by subsequent annealing, have been investigated by C- V (capacitance-voltage) methods using test element diodes. Measured carrier concentrations were compared with those simulated by one-dimensional simulators such as MIPS based on SUPREM-3, and ICECREM. Monte Carlo data by TRIM followed by diffusion with ICECREM was also compared. The simulated carrier concentration profiles by MIPS and ICECREM for 400 keV implantation agree well with measured profiles, whereas ICECREM for 700 keV implantation shows a better agreement with the measured one than MIPS. Monte Carlo data by TRIM followed by diffusion showed about 10-20% deeper profiles than those by MIPS and ICECREM.