A review of modeling issues for RF heterostructure device simulation

We give a summary of the state-of-the-art of heterostructure RF-device simulators for industrial application based on III-V compound semiconductors and compare critical modeling issues. Results from two-dimensional hydrodynamic simulations of High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) with MINIMOS-NT are presented. Simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by III-V device simulation. A summary of remaining modeling issues is provided.