SOI pixel detector based on CMOS time-compression charge-injection

Concept and experimental results obtained from a pixel detector based on CMOS Time-Compression Charge-Injection-Devices (TC-CID) with a huge internal photocurrent amplification (~104), fabricated in CMOS Silicon-On-Insulator (SOI)technology are presented. Here, the readout circuitry is fabricated on highly-doped, 200nm thick SOI film, while the photogate (PG) detector is fabricated on higher-resistivity handle wafer. The latter, together with the 30V biasing possibilities enhanced the quantum efficiency, especially for irradiations with wavelengths in the near-infra-red (NIR) part of the spectra.