A G-band cascode MHEMT medium power amplifier

A balanced amplifier has been designed and fabricated. The monolithic millimeter-wave integrated circuit (MMIC) has been realized in a 35-nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process in grounded coplanar waveguide (GCPW) technology. It demonstrates a measured small-signal gain better than 19 dB between 180 and 200 GHz. The measured saturated output power achieves a maximum value of 10.2 dBm between 180 and 190 GHz.