Process latitude for sub-200 nanometer synchroton orbital radiation X-ray lithography

Image intensity profile and resist profile calculations using the X-ray modeling and simulation program are presented for storagering X-ray lithography proximity printing. The calculations indicate that there exists a sufficiently wide process window for the replication of 100-nm-wide absorber features, using an optimized set of parameters. The effect of nonvertical absorber sidewalls on the process window is investigated.