Pulsed laser deposition of crystalline PZT thin films
Abstract
Sintered targets of PbZ(0.52)Ti(0.48)O3, are used in a pulsed laser deposition (PLD) process to deposit thin ferroelectric films onto a Pt/Ti/Si(111) substrate for electrical applications. Repetition rates vary between 1 and 200 Hz, the deposition temperature ranges from 500-800 deg C. After thin film deposition the films are treated with different post-annealing procedures. The influence of repetition rate, deposition temperature and post-annealing procedures on the morphology, stoichiometry, crystalline phase, and the resulting electrical properties of the deposited films is investigated. Analytical methods used are scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, micro-Raman spectroscopy, and impedance measurements. A model for the dependence of film thickness and stoichiometry on repetition rate and substrate temperature is presented and compared to the experimental results.
