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  4. Extreme ultraviolet plasma source for future lithography
 
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2008
Journal Article
Title

Extreme ultraviolet plasma source for future lithography

Abstract
An extreme ultraviolet (EUV) plasma source intended for future lithography applications is presented. The plasma source efficiently emits EUV light around 13.5 nm with 2% bandwidth. Debris mitigation and collector systems are successfully implemented to achieve a focused beam of debris-free EUV photons that can be used in EUV lithography.
Author(s)
Wagenaars, E.
Mader, A.
Bergmann, K.
Jonkers, J.
Neff, W.
Journal
IEEE transactions on plasma science  
DOI
10.1109/TPS.2008.917780
Language
English
Fraunhofer-Institut für Lasertechnik ILT  
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