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  4. Radiation response of P-I-P diodes on diamond substrates of various type
 
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1996
Journal Article
Title

Radiation response of P-I-P diodes on diamond substrates of various type

Title Supplement
Electrical properties of semiconductor-insulator homojunctions
Abstract
Double-junction p-i-p diodes are fabricated on natural and synthetic diamond crystals and polycrystalline CVD diamond films and subjected to gamma, electron and neutron exposure. Parameters of the radiation induced defects (concentration and energy distribution of donor-like traps) are evaluated from the experimental I-V curves using a technique which is based on a model of thermionic injection of holes into the insulating diamond over p-i potential barrier. The evaluated parameters of the traps are used for 2-D numerical simulation of radiation effects on diamond based p-i(SiO2)-p solid state triode.
Author(s)
Denisenko, A.V.
Fahrner, W.R.
Henschel, Henning
Job, R.
Strähle, U.
Journal
IEEE Transactions on Nuclear Science  
DOI
10.1109/23.556908
Language
English
Fraunhofer-Institut für Naturwissenschaftlich-Technische Trendanalysen INT  
Keyword(s)
  • diamond

  • diamond diode

  • fast neutron

  • numerical simulation

  • radiation effect

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