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  4. Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
 
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2013
Journal Article
Title

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Abstract
4H-SiC homoepitaxial layers free of basal plane dislocations (BPDs) are urgently needed to overcome the so-called bipolar degradation of high-voltage devices. BPDs being present in substrates are able to either propagate to the epilayer or convert to harmless threading edge dislocations (TEDs) in the epilayer. The model by Klapper predicts the conversion of BPDs to TEDs to be more efficient for growth on vicinal substrates with low off-cut angle. This paper aims to verify the model by Klapper by an extensive variation of epitaxial growth parameters and the substrates off-cut. It is shown that the off-cut angle is the key parameter for growth of BPD-free epilayers. Furthermore, it is shown that the model also describes adequately the behavior of different types of TEDs, i.e., TED II and TE D III dislocations, during epitaxial growth. Therefore, the model by Klapper is verified successfully for 4H-SiC homoepitaxial growth on vicinal substrates.
Author(s)
Kallinger, Birgit  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Polster, Sebastian
Chair of Electron Devices, University of Erlangen-Nuremberg
Berwian, Patrick  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Friedrich, Jochen  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Danilewsky, A.N.
Crystallography, University of Freiburg
Journal
Journal of applied physics  
Project(s)
KoSiC
Funder
Bayerische Forschungsstiftung BFS  
Open Access
DOI
10.1063/1.4829707
Additional full text version
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Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • defects

  • etching

  • x-ray topography

  • silicon carbide

  • CVD

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